KTH
/ ICT
/ EKT
/
Integrated Devices and Circuits (IDC)
60 nm Si MOSFET made by EKT in the NEMO project,
click for a cross-section of a 45 nm MOSFET.
Semiconductor device physics, physical device modelling, circuit design and fabrication technology
is our research focus. Primary application areas are high frequency silicon
technology, carbon nanotube electronics, radio and mixed signal design, photonic devices, and silicon carbide device technology for high power switching devices and high temperature integrated circuits.
Our four research areas are:
- Silicon based devices
- Photonic devices in III/V-materials based on quantum wells (VCSEL, detectors, sensors)
- Circuit design in the area radio and mixed signal
- Silicon carbide for high voltages or high temperatures in circuit applications
Our research is experimental, relying heavily on the Electrum
Laboratory (one of Europe´s leading University semiconductor labs),
and also on TCAD resources, electrical characterization and material analysis
facilities within the department.
We offer a variety of courses on semiconductor
simulation, device design and process technology at all levels from B.Sc./M.Sc.
to Ph.D.
Our graduates go on to work in academia or
for market leading multinational companies worldwide.
IEEE Electron Devices chapter seminars
NEW:
HOTSiC - High Temperature Power Electronic Systems with SiC Integrated Circuits
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